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Mitigating Edge Effects In Gate-Normal Tunneling Feld-Effect Transistors Using a Ti/TiN Dual-Metal Gate
Mitigating Edge Effects In Gate-Normal Tunneling Feld-Effect Transistors Using a Ti/TiN Dual-Metal Gate
2018
S. Glass
Keywords:
Transistor
Quantum tunnelling
Optoelectronics
Tin
Materials science
Metal gate
Correction
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