EGOFET Gated by a Molecular Electronic Switch: A Single‐Device Memory Cell

This work was funded by ITN iSwitch 642196 (V.P. and M.S.M.), ERC StG 2012‐306826 e‐GAMES, the EuroNanoMed III project “AMI,” the Networking Research Center on Bioengineering, Biomaterials, and Nanomedicine (CIBER‐BBN), the Generalitat de Catalunya (2017‐SGR‐918) and the Spanish Ministry of Economy and Competitiveness, through the project FANCYCTQ2016‐80030‐R and “Severo Ochoa” Programme for Centers of Excellence in R&D (SEV‐2015‐0496). V.P. is enrolled in the Molecular and Regenerative Medicine Programme of the Universita di Modena and Reggio Emilia. M.S.M. and Q.Z. are enrolled in the Materials Science PhD Program of Universitat Autonoma de Barcelona. S.C. acknowledges the People Programme (Marie Curie Actions) of the Seventh Framework Programme of the European Union (FP7/2007‐2013) under Research Executive Agency Grant Agreement No. 600388 (TECNIOSpring programme), and from the Agency for Business Competitiveness of the Government of Catalonia, ACCIO. Q.Z. acknowledges the China Scholarship Council, the National Natural Science Foundation (NSF) of China (11404266) and the Fundamental Research Funds for the Central Universities (Grant No. XDJK2011C041).