Study of diffusion at surface of multilayered Cu/Au films on monocrystalline silicon

Abstract Multilayered of pure gold and copper films were evaporated alternatively on (1 0 0) monocrystal silicon substrates. Annealing, in a furnace vacuum, were carried out at 200 and 400 °C for 30 min. The obtained samples were analyzed by means of Rutherford backscattering spectrometry, X-ray diffraction and scanning electron microscopy techniques. The interdiffusion of the different elements and the thermodynamic transformations at Cu/Au and Au/Si interfaces have been investigated.