Enhanced Raman intensity in ZnS planar and channel waveguide structures via carbon ion implantation

Abstract Planar and channel waveguides in ZnS single crystal are fabricated by 6.0 MeV C ion implantation with fluences of 5 × 1014 and 1 × 1015 ion/cm2 at room temperature. The optical modes for the planar waveguides are measured by using a prism coupler by the well-known m-line method. The near-field light intensity profiles for the planar and channel waveguides are measured by the end-face coupling setup at 633 nm and 1539 nm. The reflectivity calculation method and the finite difference beam propagation method are used to reconstruct the refractive index profile of the planar waveguides and near-field intensity distribution of planar and channel waveguides. Raman images obtained with a 532-nm laser are collected to evaluate the damage to the ZnS crystal and waveguide layers.