AlGaAs/GaAs Heterostructure with Hybrid InSb/GaAs and GaSb/GaAs Quantum Dots and Its Optical Characteristics

In this work, quantum dots of type-I InSb/GaAs and type-II GaSb/GaAs are grown and capped with AlGaAs. This novel structure is expected to enhance the infrared absorption and provide long lifetime of photo-generated carriers. Preliminary power-dependent photoluminescence spectroscopy is performed to reveal a basic optical properties of the nanostructure.