Photodetectors from Porous Silicon

A metal-semiconductor-metal photoconductive detector has been fabricated from porous silicon. To that aim low conductive p-type Si (20 Ω cm) has been porosified and several rapid-thermal treatment steps applied before deposition of Al-contacts. The photo response was investigated in the wavelength range of 350-800 nm. A responsivity of up to 4 A/W was observed at 600 nm which is about 13 times higher than that of a commercial photodiode.