Fabrication and characterization of thick porous silicon layers for rf circuits

Abstract Porous silicon (PS) has been considered as a promising material for application to rf devices recently. In this paper, we present the characterization of PS layer in terms of Raman Spectroscopy and X-ray diffraction. The results obtained from the 400 μm-thick PS samples showed a shift of Raman peak position to 519 cm −1 and a lattice expansion of 0.1% compared with single crystal Si(1 0 0). Coplanar waveguides (CPWs) have been formed on the PS layers in attempt to obtain low-loss transmission lines for rf circuits.