A 15.5 W Si-LDMOS Balanced Power Amplifier with 53% Ultimate PAE for High Speed LTE

In this paper, a 15.5 W Si-LDMOS balanced power amplifier (PA) technique operating in the 2.620–2.690 GHz frequency band for LTE systems is presented. The amplifier was designed using large signal Si-LDMOS models, which demonstrated saturation P1dB of 41 dBm and 53% PAE. The AM-AM and AM-PM measured data of the balanced amplifier is extracted and embedded in the device under test (DUT) based on IEEE 802.16 OFDM WLAN Transceiver system. A simple linear model was design for behavioral modelling of memory-less baseband digital pre-distorter. The nonlinearity of the balanced amplifier has been compensated using the Simulink version R2011a.