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二元系酸化物RRAM特性の電極材料依存性(メモリ技術(DRAM,SRAM,フラッシュ,新規メモリー))
二元系酸化物RRAM特性の電極材料依存性(メモリ技術(DRAM,SRAM,フラッシュ,新規メモリー))
2008
yukio tamai
hiroyuki akinaga
yasunari hosoi
sigeo oonisi
nobuyosi awaya
Keywords:
Parallel computing
Resistive random-access memory
Static random-access memory
Materials science
Dram
Computer science
Embedded system
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