GaAs, AlGaAs and InGaP Tunnel Junctions for Multi‐Junction Solar Cells Under Concentration: Resistance Study

Jeffrey F. Wheeldon,Christopher E. Valdivia,Alex Walker,Gitanja Kolhatkar,Denis Masson,Bruno Riel,Simon Fafard,Abdelatif Jaouad,Artur Turala,Richard Ares,Vincent Aimez,Trevor J. Hall,Karin. Hinzer

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi‐Junction Solar Cells Under Concentration: Resistance Study

2010

Jeffrey F. Wheeldon
Christopher E. Valdivia
Alex Walker
Gitanja Kolhatkar
Denis Masson
Bruno Riel
Simon Fafard
Abdelatif Jaouad
Artur Turala
Richard Ares
Vincent Aimez
Trevor J. Hall
Karin. Hinzer

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of 5×10−4 ωcm2.

Keywords:

Multijunction photovoltaic cell
Doping
Josephson effect
Solar cell
Quantum tunnelling
Electric current
Electronic engineering
Electrical resistivity and conductivity
Materials science
gaas algaas
semiconductor materials
Optoelectronics

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