Research on Optical Properties for the Exponential-Doped Ga1-xAlxAs/GaAs Photocathode

To research the influencing factors in the optical properties of Ga1-xAlxAs/GaAs photocathode, one uniform-doped sample was prepared with the GaAs thickness of 2.00 μm and the Be-doping concentration of 1×10 19 cm -3 , and two more exponential-doped samples were 2.00 μm and 1.60 μm in the thickness whose Be-doping concentration quasi-exponentially distributed ranging from 1×10 18 cm -3 to 1×10 19 cm -3 . The optical properties curves were separately measured by use of the spectrophotometer. Based on thin film optical principles, matrix model of the optical properties is built for the four-layer photocathode module with a structure of Glass/Si3N4/Ga1-xAlxAs/GaAs. The result shows that the photocathode with low average doping concentration and large thickness has high absorptivity within the response waveband. According to integral sensitivity equation, the optimized GaAs thickness of the exponential-doped Ga1-xAlxAs/GaAs photocathode is simulated to be 2.00 μm. monolayer model, which is unsuited to the photocathode module. In the paper, we build matrix model of the optical properties based on thin film optical principles. According to the experimental results of the samples with different average doping concentrations and thicknesses in the GaAs active layer, we analysis the impacts of both the factors on the optical properties curves of the photocathode. In addition, the optimal GaAs thickness of the exponential-doped Ga1-xAlxAs/GaAs photocathode is simulated by use of integral sensitivity equation.