0.4V,5.6mW InPHEMT V-band Low-Noise Amplifier MMIC

Thispaperdemonstrates thelow-power operation ofanInPHEMT V-bandlow-noise amplifier (LNA)MMIC.The device usedhereisacommercial 0.1-jlm InPHEMT developed forhigh-speed digital ICs.Thefabricated two-stage LNA MMIC, chipsize of0.9mm2,employs two50-jlm gate-width InPHEMTs andcoplanar waveguides. Under0.4V supply voltage operation, theMMIC achieves anoise figure of2.86dBat60GHzwithan associated gainof12.3dB.Thepowerdissipation oftheMMIC wasonly5.6mW. Theinput IP3was-9dBm at60GHz.A 3-dB bandwidth of44.6GHz to67.2GHz wasalsoachieved. These results indicate theInPHEMT technology hasagreatpotential forthelow-voltage andlow-power ICsthatareneededforfuture millimeter-wave high-speed wireless applications. ~~~~~~~~~~~2 | ~~~~frnax __4_,