Recombination processes in type I and type II Sb-based laser structures

Radiative and non-radiative recombination processes in Sb-based laser structures are calculated and discussed with a focus on the differences between type I and type II laser structures. Auger recombination, optical gain, and intervalence band absorption are computed as a function of temperature for ideal laser threshold conditions. These quantities as well as laser threshold currents are discussed for each type of structure. The calculations show that the type I structure is dominated by radiative recombination at low temperatures and by electron Auger processes at high temperatures, and it has the lowest threshold current of the two laser structures studied. The type II structure has similar behavior except it is dominated by hole Auger processes at high temperatures. Finally, these recombination rates are correlated with qualitative features in the bandstructures.