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Effects to addition of H 2 into Cl 2 plasma at high temperature for etching of GaN
Effects to addition of H 2 into Cl 2 plasma at high temperature for etching of GaN
2018
Takahiro Omichi
Tanide Atsushi
Ishikawa Kenji
Tsutsumi Takayoshi
Kondo Hiroki
Sekine Makoto
Hori Masaru
Keywords:
Etching
Materials science
Analytical chemistry
Gallium nitride
Plasma
Correction
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