Flexible Memristive Devices Based on InP/ZnSe/ZnS Core–Multishell Quantum Dot Nanocomposites

The effects of the ZnS shell layer on the memory performances of flexible memristive devices based on quantum dots (QDs) with an InP/ZnSe/ZnS core–multishell structure embedded in a poly(methylmethacrylate) layer were investigated. The on/off ratios of the devices based on QDs with an InP/ZnSe core–shell structure and with an InP/ZnSe/ZnS core–multishell structure were approximately 4.2 × 102 and 8.5 × 103, respectively, indicative of enhanced charge storage capability in the latter. After bending, the memory characteristics of the memristive devices based on QDs with the InP/ZnSe/ZnS structure were similar to those before bending. In addition, those devices maintained the same on/off ratios for retention time of 1 × 104 s, and the number of endurance cycles was above 1 × 102. The reset voltages ranged from −2.3 to −3.1 V, and the set voltages ranged from 1.3 to 2.1 V, indicative of reliable electrical characteristics. Furthermore, the possible operating mechanisms of the devices are presented on the basi...