Advanced Damascene integration using selective deposition of barrier metal with Self Assemble Monolayer

Selective deposition of Cu diffusion barrier metal layer on dielectric with Self-Assembled Monolayer (SAM) has been demonstrated. Via resistance is expected to decrease by eliminating the barrier at via bottom in dual- and semi-damascene structure. In this study, we report the evaluation of SAMs to enable selective ALD-barrier metal deposition and, as an example, we show Cu via prefill integration using ELD-Cu with no barrier / liner at via bottom and no seam void for metal filling.