An investigation of various post-RIE cleaning processes for dry etched InP-based HEMTs

Abstract Post-RIE cleaning processes after the dry gate recess etching step of lattice-matched InGaAs/InAlAs/InP-HEMTs using an oxygen plasma treatment of the surface followed by various wet chemical steps have been investigated. The treated surfaces have been analyzed using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). In addition, the electrical characteristics have been assessed by DC and microwave measurements of HEMT devices. A considerable improvement of the surface quality using post-RIE cleaning has been observed, resulting in better electrical device performance.