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Full Band Monte-Carlo Device Simulation of 0.1 - 0.5 um Strained-Si P MOSFETs
Full Band Monte-Carlo Device Simulation of 0.1 - 0.5 um Strained-Si P MOSFETs
1998
Keith
Jungemann
Meinerzhagen
Keywords:
device simulation
Optoelectronics
Electron mobility
Doping
Monte Carlo method
Germanium
CMOS
Silicon
Materials science
Threshold voltage
Correction
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