Core–shell Ag@TiO 2 Nanowire Network Based Volatile Threshold Resistive Switching Device

In core-shell nanowire (NW) networks, the electrical connectivity of nanoscale core-shell nanowire junction can be modulated for potential applications in modern electronic components, especially the resistive switching (RS) application. In this work, an Ag@TiO 2 core−shell structure was deliberately designed to fabricate a resistive switching device with an Ag/Ag@TiO 2 /Ag planar structure, in which the Ag core can act as metallic interconnect and the insulating TiO 2 shell acts as a switching medium to provide a conductive pathway for Ag filament migration. The device displays a volatile threshold resistive switching characteristic, and an on/off ratio of ~105 was achieved. This work provides a foundation for engineering core-shell Ag@TiO 2 nanowire network for RS devices.