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Acemap > Paper > P 2 S 5 /(NH 4 ) 2 S x -Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs

P 2 S 5 /(NH 4 ) 2 S x -Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs

2014 
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