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Acemap > Paper > 極薄SOI層と素子間分離領域の形成を一体化する新技術:SBSI―SiGe選択エッチング特性の硝酸濃度依存性―

極薄SOI層と素子間分離領域の形成を一体化する新技術:SBSI―SiGe選択エッチング特性の硝酸濃度依存性―

2004 
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