Structural, Dielectric and Ferroelectric Properties of Manganese (Mn) Doped Bismuth Titanate (Bi 4 Ti 3 O 12 ) Ceramics

A bstract— Manganese (Mn) doped Bismuth Titanate Bi 4 Mn xTi (3-x) O12 ( x = 0.0, 0.1, 0.2, 0.3, 0.4) powders were prepared by high temperature solid state reaction route. Structural properties were studied by X-ray diffraction (XRD). Dielectric and ferroelectric properties were studied by making ceramic pellet samples. The dielectric constant er and loss tangent (tan δ) of BMT ceramics were measured as a function of frequency (1 kHZ - 100 kHz) and were also studied the comparison of two temperatures (Room Temp and 50°C) applied with temperature controller. Hysteresis loop measurements were performed with Sawyer-Tower circuit at 100 kHz and 10 V. According to the results, ferroelectric hysteresis loops were changed with respect to stoichiometric compositions. According to the experimental results the laboratory prepared devices were utilized for nonvolatile ferroelectric random access memory (NVFRAM) applications.