Parasitic element dependent scattering parameter evaluation of GaN MESFET

Analytical expressions for parasitic-element-dependent scattering parameters of a non-self-aligned GaN MESFET are evaluated and their variation with frequency is shown. Maximum stable gain and maximum transducer power gain of the device are also evaluated and it is found that a GaN MESFET with the dimensions (1.5 × 100 μm) has maximum stable gain of about 13 dB. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 33: 54–57, 2002; DOI 10.1002/mop.10230