Deposition of a Continuous and Conformal Copper Seed Layer by a Large-Area Electron Cyclotron Resonance Plasma Source with Embedded Lisitano Antenna

To deposit copper seed layer on ultra large scale integration devices, a large-area (O 378 mm) electron cyclotron resonance plasma has been generated by using permanent magnets-embedded Lisitano antenna. The plasma source operates in the pressure range of 0.2–1.5 mTorr with microwave power range of 500–2,000 W. By using a Langmuir probe, the electron density and temperature have been measured near the DC sputter target position. Measurements indicate argon plasmas having electron densities of ~5 × 1010/cm and electron temperatures of 5 eV with 750 W microwave power at gas pressures of 0.5 mTorr. Using this plasma source and a DC sputter, we obtained excellent conformal copper seed layer with high aspect ratios of 12:1. This is in contrast with conventional methods using magnetron sputter, which has aspect ratios of 2–3:1. Also, improvements are observed in the smoothness (root mean square roughness of 1.345 nm), uniformity (2.5 % at 300 mm wafer), and sidewall symmetricity (more than 95 %) of the copper seed layer.