Static and switching characteristics of 3.3 kV double channel-doped SiC vertical junction field effect transistor in cascode configuration

A silicon-carbide (SiC) junction field-effect transistor (JFET)/Si metal–oxide–semiconductor field-effect transistor (MOSFET) cascode is a good solution owing to its high reliability, low on-resistance, high switching speed, and good gate controllability. A 3.3 kV SiC vertical JFET using a double channel doping technique is proposed in this paper. The characteristics of a cascode including the developed JFET are also presented. A blocking voltage higher than 4.0 kV and a low on-resistance of 14.7 mΩ cm2 were realized. The saturation current of the cascode was suppressed by controlling the threshold voltage of the JFET. Moreover, small switching losses were obtained.