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Behaviors of Interfacial Oxide of Poly-Si/Silicon-Emitter in A BiCMOS Structure
Behaviors of Interfacial Oxide of Poly-Si/Silicon-Emitter in A BiCMOS Structure
1992
G.M. Hong
J. Y. Lin
H. L. Hwang
Keywords:
Oxide
BiCMOS
Common emitter
Electronic engineering
Silicon
Materials science
Optoelectronics
interfacial oxide
Correction
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