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Effect of strained layer superlattice (SLS) on breakdown voltage of fully-vertical GaN p-n diodes on Si
Effect of strained layer superlattice (SLS) on breakdown voltage of fully-vertical GaN p-n diodes on Si
2018
Naoki Torii
Debaleen Biswas
Yamamoto Keiji
Egawa Takashi
Keywords:
Optoelectronics
Superlattice
Semiconductor
Diode
Breakdown voltage
Materials science
Correction
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