Stable Polymer Dielectric Film for Polythiophene Thin Film Transistor on Modified Poly(vinyl phenol) with Polar Functional Group

In this work, a modified poly(vinyl phenol) (MPVP) polymer dielectric solution with high permittivity and resistant to moisture was used. The MPVP was synthesized by replacing the hydroxyl group in PVP with a polar amino functional group. The material properties of polymer films were characterized by nuclear magnetic resonance (NMR) analysis, gel permeation chromatography (GPC), and thermogravimetric analysis (TGA). Dielectric layers properties were analyzed by current–voltage and capacitance–voltage measurement of a metal–dielectric–metal capacitor and a polythiophene (P3HT) polymer transistor. The stable leakage current, permittivity and output characteristic indicate that MPVP is suitable for a large-area continues-printing process.