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Impact of Cell Layout and Device Structure on On-Voltage Reduction of 6.5-kV n-Channel SiC IGBTs
Impact of Cell Layout and Device Structure on On-Voltage Reduction of 6.5-kV n-Channel SiC IGBTs
2018
Naoki Watanabe
Hiroyuki Yoshimoto
Akio Shima
Keywords:
Materials science
Composite material
Voltage reduction
Insulated-gate bipolar transistor
Electronic engineering
Communication channel
n channel
Optoelectronics
ultra high voltage
Correction
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