Phase Change Alloys for Very High Temperature Data Retention Applicable for Automotive Applications

Phase-change memory (PCM) alloys based on Germanium, Antimony and Tellurium (GST) with SiO2 nanoscale dielectric inclusions are investigated for material and electrical properties. The addition of dielectric inclusions in select GeSbTe significantly increases the crystallization temperature and device data retention. In memory device configurations, the optimal nanocomposite alloys exhibit 10 year data retention above 200 ˚C, and a cycle life greater than 1x10 7 cycles while maintaining set programming speed of 250 ns demonstrating PCM as an excellent candidate for both discrete and on-chip embedded memory in the demanding automotive microcontroller market.