Device-to-circuit modeling approach to Metal – Insulator – 2D material FETs targeting the design of linear RF applications

We present a physics-based device-to-circuit modeling approach to metal – insulator – 2D material based field-effect transistors (2DFETs). Starting from numerical simulations based on the self-consistent solution of the 2D Poisson and 1D Drift-Diffusion equations, we obtain the electrostatics and current-voltage characteristics of such devices. Then, assuming small-signal operation, a charge-based equivalent circuit is fed with the small-signal parameters computed from the numerical results and then it is implemented in a standard circuit simulator. This framework enables the design and assessment of linear radio-frequency applications based on novel and emergent 2DFETs. The approach has been applied to an experimental MoS 2 transistor by benchmarking the transfer characteristics and then predicting the expected performance of such device as a common-source power amplifier, for instance a power gain of 8.6 dB at 2.45 GHz.