Deep Understanding of Negative Gate Voltage Restriction for SiC MOSFET under Wide Temperature Range

The origin and related physical insights of gate reliability issues under various Vgs and higher temperatures (up to 300) are revealed in depth. The safety limit of positive Vgs of SiC MOSFET is mainly dependent on the gate oxide on the JFET surface whereas that of negative Vgs is dependent on the gate oxide on the channel surface. The gate oxide on the channel surface is weaker than that on the JFET surface in terms of Fowler-Nordheim (F-N) tunneling, resulting in the current asymmetric safety range of Vgs. When temperature ranges from 25 to 150C, the degradation of gate oxide under -15V

Keywords:

• MOSFET
• Optoelectronics
• gate voltage
• Materials science
• Atmospheric temperature range

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