Gallium Arsenide Tunnel Diodes

ESAKI, or tunnel, diodes1–3 in gallium arsenide have been made in this Laboratory. Zinc-doped gallium arsenide was prepared by diffusion to give a concentration of 9 × 1019 impurity atoms/cm.3 and tin pellets were alloyed on to this material to form a junction. The diameter of the pellets varied from 0.003 to 0.015 in.