Semiconductor-device electromagnetic damage threshold measurement system and method

A semiconductor-device electromagnetic damage threshold measurement system and a method are disclosed. The system comprises two radio frequency sources with adjustable frequencies and adjustable power, a combiner, a power amplifier, an isolator, a directional coupler, a semiconductor device test clamp, an oscilloscope and an external power supply source. The method comprises the following steps of measuring a device characteristic of each sample; putting a tested semiconductor device into the semiconductor device test clamp and providing power for the tested semiconductor device; connecting a radio frequency signal generator and closing output of the radio frequency signal generator; opening the power amplifier and adjusting a gain; opening output of the signal generator, observing incident power and reflection power of a dual-channel power meter and recording data on the oscilloscope; removing the tested device, detecting whether performance is changed and recording related data on the oscilloscope if the performance is changed. By using the system and the method of the invention, electromagnetic damage energy of the semiconductor device can be tested; an electromagnetic damage threshold can be determined and a technology support is provided for a safety assessment of the semiconductor device in a complex electromagnetic environment.