Very High Density ( 44 fF ∕ μm2 ) SrTiO3 MIM Capacitors for RF Applications

We demonstrate a high-performance TaN/SrTiO 3 /TaN metal-insulator-metal (MIM) radio-frequency (if) capacitor with good device integrity of very high capacitance density of 44 fF/μm 2 , small voltage linearity a of 54 ppm/V 2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits.