Integration of 1200V SOI gate driver ICs into a medium power IGBT module package

A novel approach for medium power IPMs is presented combining a 1200V, 50A IGBT/FWD-Inverter module based on spring contact technology with new developed advanced silicon on insulator (SOI) gate driver ICs in a reliable cost effective package with excellent thermal resistance. The measurement results (static, dynamic and three phase power inverter tests) demonstrate the driver and system performance. The new system approach for industrial standard drive applications supports the market trend towards integrated power module solutions already known from the low power consumer market.