Near-infrared photodetectors based on mercury indium telluride single crystals
2007
Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting
electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of
clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS)
photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition
(PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and
an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a
fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal
electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based
on the energy diagram and the found parameters of the Schottky barrier. Details of oxidation process, Schottky diodes, as
well as the photodetectors fabrication and characterizations are discussed.
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