Electrical and infrared absorption studies on La-silicate/Si interface

La-silicate/Si interface were investigated by measuring C-V characteristics and infra-red absorbance spectra. Interface state density (D it ) down to 10 10 cm −2 /eV was obtained by annealing at temperature over 800 °C. A red-shift due to Si-O-Si LO phonon toward 1250 cm −1 was found. We speculate that relaxation of SiO 4 networks in Lasilicates results in low D it .