Growth and doping properties of AlGaAs/GaAs/InGaAs structures on nonplanar substrates for applications to low threshold lasers

Abstract The growth behavior of AlGaAs/GaAs/InGaAs structures on non-planar (100) GaAs substrates has been studied. The structures were grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on substrates which have mesa stipes aligned along the ( 1 10) direction with (100) mesa tops and (111)A sidewalls. The growth rates and the doping of the AlGaAs/GaAs/InGaAs layers are shown to have a strong dependence on the crystallographic orientation as the sidewall approaches the (111)A plane. Growth temperature and III–V ratio also affect the relative growth rate and the doping of the layers. Using the above properties, we have grown and fabricated low threshold InGaAs/GaAs QW lasers by a single step MOCVD growth. Threshold current as low as 0.5 mA for uncoated DQW lasers has been achieved.