Performance of silicon sensor quality control centre developed at the University of Delhi

The Silicon strip sensors in high energy physics collider experiments have excellent capabilities of vertexing and tracking of incoming particles produced as a result of collision. These sensors are placed in intense radiation environment and hence undergo severe bulk and surface radiation damage. In order to operate these detectors with good physics performance, they must be subjected to stringent tolerance limits for their design parameters. These design parameters include global, strip and inter-strip parameters. The sensors are characterized for these parameters in temperature and humidity controlled environment, which are then accepted or rejected based on the constraints imposed on these parameters offered by a specific experiment.Our group at the University of Delhi is engaged in the process of developing a silicon sensor quality control centre for testing a large number of silicon micro-strip sensors. The primary objective of this facility is the qualification of these sensors for the outer tracker of the CMS experiment in High-Luminosity LHC upgrade. The system consists of a probe station and a set of electrical characterization units. The entire system is interfaced through the Automated Characterization Suite (ACS) software which allows the automatic characterization of the whole multistrip sensor without any manual intervention. The set-up has been under testing for measurements involving global, strip and inter-strip parameters. In this work, we present the details of this characterization system and measurements performed on some silicon strip sensors. To calibrate our setup the same set of measurements are performed with the setup available at the University of Pisa, Italy. The measurements performed using these two setups are found to be consistent with each other.