The Effect of Silicon Oxide Based RRAM with Tin Doping
2012
2011, Volume 15, Issue 3, Pages H65-H68. Electrochem. Solid-State Lett. Chuang, Cheng-Hua Li, Der-Shin Gan and Simon M. Sze Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Yong-En Syu, Siang-Lan The Effect of Silicon Oxide Based RRAM with Tin Doping service Email alerting click here in the box at the top right corner of the article or Receive free email alerts when new articles cite this article sign up
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