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Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation
Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation
2021
A. V. Naumov
V. V. Kaliuzhnyi
Svetlana Vitusevich
Hilde Hardtdegen
Alexander Belyaev
Keywords:
Excitation
Optoelectronics
Nanowire
High-electron-mobility transistor
Electron transport chain
Materials science
algan gan
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