Improved noise performance of ion-implanted MESFET devices by optimised pre and post implant wafer annealing.

In this article we illustrate how the noise performance of ion-implanted MESFET devices can be appreciably improved by means of optimised pre and post implant annealing cycle. With this technique the 12 GHz noise figure of 0.5x300 um devices is reduced from 2.7 dB to 1.8 dB.