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Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement
Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement
2018
Zhou Xing-Ye
Lv Yuanjie
Tan Xin
Wang Yuangang
Song Xubo
He Zezhao
Zhang Zhirong
Liu Qing-bin
Han Ting-ting
Fang Yulong
Feng Zhihong
Keywords:
Trapping
Optoelectronics
high electron
Transistor
Materials science
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