A process for producing a semiconductor wafer of silicon

A process for producing a semiconductor wafer made of monocrystalline silicon, comprising providing a substrate wafer of monocrystalline silicon, the interstitial oxygen with a concentration of not less than 4.5 × 10 an RTA treatment of the substrate wafer, which is divided into a first heat treatment of the substrate wafer S and no longer at a first temperature in a temperature range of not lower than 1160 ° C and not more than 1,190 ° C, for a period of not less than 5 and 30 s, wherein at least a front side of the substrate wafer to an atmosphere consisting exposed of argon, and in a second heat treatment of the substrate wafer at a second temperature in said temperature range for a period of not less than 15 s and not more than 35 s, wherein at least the front side of the substrate wafer to an atmosphere consisting of argon and exposed to ammonia.