Growth of graphene-like thin films at low temperature by dual-frequency capacitively coupled plasma

Abstract Growth of graphene-like films at low temperature on 2 cm × 2 cm glass substrate without using any metallic catalyst was developed by dual-frequency capacitively coupled plasma (DF-CCP) enhanced chemical vapor deposition (CVD), and then annealed at 300–500 °C. Transmittance measurement indicates the thin films were about two layers. Raman spectroscopy not only confirms the sp 2 -C structure but also reveals the high defect densities in the as-deposited thin films. The calculated crystalline length of the as-deposited films is 55.97 nm. However, after annealing treatment the defects can be decreased and the crystalline length increased to maximum of 149.25 nm. Therefore, the high quality graphene-like thin films can be obtained at low temperature.