Distribution of D1 dislocation luminescence centers in Si+-implanted silicon and the photoluminescence model

Abstract Using step-by-step removal of silicon layers, in which dislocation-related photoluminescence is observed after Si + (100 keV, 1·10 15  cm −2 ) ion implantation followed by high-temperature annealing in a chlorine containing atmosphere, it has been found that a majority of dislocation-related centers of luminescence at ~1.5 μm (D1 line) is localized at the depths of Si + ion ranges. Cross-sectional electron microscopy shows that the dislocations introduced by the implantation treatment (implantation plus annealing) penetrate to depths of ~1 μm. A phenomenological model of the D1-line dislocation-related luminescence is developed based on the assumption that the K-centers and modified A-centers located in the atmospheres of dislocations are responsible for this luminescence line. The temperature dependence of luminescence intensity calculated on the basis of the model fits well the experimental data for the D1 line.