AlGaN/GaN MISHEMTs with High-k LaLuO3 Gate Dielectric

A high-κ LaLuO3 (LLO) thin film is successfully incorporated into AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) as the gate dielectric. The LLO–AlGaN/GaN MISHEMTs fabricated with a planar process exhibit a high ION/IOFF of 10 , a maximum drain current of 820 mA/mm at VGS = 3 V, a peak transconductance (Gm) of ∼192 mS/mm, and a steep subthreshold slope (SS) of ∼73 mV/dec.