Perimeter Recombination Characterization by Luminescence Imaging
2016
Perimeter recombination causes significant efficiency loss in solar cells. This paper presents a method to quantify perimeter recombination via luminescence imaging for silicon solar cells embedded within the wafer. The validity of the method is discussed and verified via 2-D semiconductor simulation. We demonstrate the method to be sufficiently sensitive in that it can quantify perimeter recombination even in a solar cell where no obvious deviation from ideality is observed in the current–voltage (J–V) curve.
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