Scanning tunneling microscope images of native defects on the ZnSe(110) surface

Scanning tunneling microscope images of native antisite defects at the relaxed (110) surface of ZnSe are predicted. The images of a particular sample depend on the sign of the voltage bias and the voltage sweep of the sample relative to the microscope tip, and whether that sweep causes a deep level to actively participate in the tunneling. Under certain conditions the images give the appearance of two defects at incorrect sites.